RIE-1701 Plasma System0 pages

RIE-1701 Plasma System
Features and Benefits

Touch screen control and graphical user
interface provide real-time process data
and feedback
13.56 MHz RF generator with automatic
matching network delivers excellent
process repeatability
Temperature control loop integrated into
plasma chamber enables precise control
available
Optional turbo-molecular pump package
and butterfly valve pressure control
available

Affordable reactive ion etching (RIE) in a
compact, bench top configuration
The RIE-1701 anisotropic reactive ion etch plasma
system from Nordson MARCH is completely selfcontained, requiring minimal bench space. The system
chassis, which also serves as an integrated safety
enclosure, houses the plasma chamber, control
electronics, 13.56 MHz RF generator, and the automatic
matching network (only the vacuum pump is external to
the system). Maintenance access is provided through an
interlocked door or easily removed panels.
The plasma chamber is constructed of high-quality
anodized aluminum with ceramic fixtures for superior
durability. The plasma chamber can be configured with
6″ or 8″ powered electrodes to accommodate a wide
range of wafer sizes, piece-parts, IC packages and other
components.

High performance plasma etching for Failure
Analysis or MEMs and LED device
manufacturing
The RIE-1701 system is designed for advanced etching
applications such as: removal of interlayer films for
failure analysis, de-encapsulation and dielectric material
removal, etching of oxides, nitrides, polyimides, silicon,
metal, III-V and II-VI materials for MEMS, LED, or IC
device manufacturing, epoxy removal; photoresist
stripping and descum.
The system can accommodate a wide range of process
gases, including: Ar, O2, H2/forming gas, He, CF4, and
SF6. Standard are two electronic mass flow controllers
for optimal gas control, with two more available as
options (4 total).