Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa0 pages

Sputtering targets for high quality CIGS

CuGa, CuIn, CuInGa

Sputtering of the absorber precursor layer of CIGS thin film solar cells offers advantages in terms of homogeneity, process
stability and material utilization. CuGa, CuIn and CuInGa sputtering targets are available in various compositions. An optimal
sputtering behavior is achieved by a homogenous and fine-grained microstructure.

Composition flexibility
We provide sputtering targets accor-

CuIn

CuGa

CuInGa

ding to your specific CIGS process.
A great variety of CuGa, CuIn and

Cu: 70 - 90 %
In: 10 - 30 %

CuInGa target composition is possible

Cu: 60 - 90 %
Ga: 10 - 40 %

through PLANSEE’s powder-metallurgical manufacturing process.

Cu: > 30 %
In: > 60 %
Ga: < 30 %

Ga-content: ±1 wt.% / In-content: ±1 wt.%

Physical Data (Cu75Ga25 wt.%) at 25 °C
Density
Grain size
Electrical conductivity

8.65 (> 99 %) g/cm³
< 100 µm
> 7.0 MS/m

Hardness
Thermal conductivity
Thermal expansion

200 - 230 HV10
> 45 W/m·K
~ 23 · 10-6 1/K