Si5904DC MOSFETS0 pages

Si5904DC
Vishay Siliconix

Dual N-Channel 2.5 V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)

RDS(on) (Ω)
0.075 at VGS = 4.5 V

± 4.2

0.134 at VGS = 2.5 V

20

ID (A)
± 3.1

• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC

1206-8 ChipFET ®
1
D1

S1
D1

D2

G1
D1

S2
D2

G2

Marking Code
G1

CB XX

D2

G2

Lot Traceability
and Date Code
Part # Code

Bottom View

S1

S2

N-Channel MOSFET

Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free)
Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter

Symbol

5s

Steady State

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)a

TA = 25 °C
TA = 85 °C

Continuous Source Current (Diode Conduction)a

IS
TA = 25 °C

Maximum Power Dissipationa

TA = 85 °C

PD

± 3.1

± 3.0

± 2.2
± 10

1.8
2.1

1.1

1.1

0.6

A

0.9

TJ, Tstg

Operating Junction and Storage Temperature Range

V

± 4.2

IDM

Pulsed Drain Current

Soldering Recommendations (Peak

ID

Unit

- 55 to 150

Temperature)b, c

W
°C

260

THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)

Symbol
t≤5s
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

50

60

90

110

30

Unit

40

°C/W

Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10

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