MAGX-001090-600L000 pages

MAGX-001090-600L00 AliACOAIi

MAGX-001090-600L0S

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 us Pulse, 2% Duty_Rev, vs

Features

• GaN on SiC Depletion-Mode Transistor

Technology

• Internally Matched

• Common-Source Configuration

• Broadband Class AB Operation

• RoHS* Compliant and 260°C Reflow Compatible

• +50 V Typical Operation

• MTTF = 600 years (Tj < 200°C)

Applications

• Civilian Air Traffic Control (ATC), L-Band

secondary radar for IFF and Mode-S avionics.

• Military radar for IFF and Data Links.

Description

The MAGX-001090-600L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor optimized for

pulsed avionics and radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth, and ruggedness over a wide

bandwidth for today's demanding application needs.

High breakdown voltages allow for reliable and

stable operation under more extreme mismatch

load conditions compared with older semiconductor

technologies.

MAGX-001090-600L00

MAGX-001090-600L0S

Ordering Information

Part Number Description

MAGX-001090-600L00 Flanged

MAGX-001090-600L0S Flangeless

MAGX-001090-SBOPPR J °? \109DGHz.

Evaluation Board

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the produces) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298