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MOCVD and ALD0 pages
Plasma Assisted MOCVD Systems
nnnnNano-Master, Inc. has developed the first Table Top Plasma Assisted Metal Organic Chemical Vapor Deposition
nnnn(PA-MOCVD) system for InGaN and AlGaN deposition processes. The features include five bubblers with
nnnnindividual cooling baths, heated gas lines, 950 °C platen, three gas rings, RF plasma source with Shower Head Gas
nnnnDistribution and N2 flush at the end of the process, 5 IO7 Torr base pressure, 250 1/sec turbo pump with oil-free scroll
nnnnpump, PC controlled, fully automated and safety interlocked.
nnnnRecently this technology has been extended to five 4" wafer stand alone batch system which can be integrated into a
nnnncluster configuration to meet high throughput production needs.
nnnnNMC-3000 TableTop System
nnnn• Application: Green LED's (GaN, InGaN, AlGaN, ...)
nnnn• 950 °C Platen, 2" Wafer
nnnn• 5 10-7 Torr Base Pressure
nnnn• PC Controlled with Lab VIEW
nnnn• Recipe Driven, Password Protected
nnnn• Fully Safety Interlocked
nnnnNMC-4000 Stand Alone System
nnnn•14" Stainless Steel Cube Chamber
nnnn•One 6" Wafer with 8" Platen or Five 4" Wafers on 12" Platen
nnnn• RF Plasma Source with Auto Tuner
nnnn•1100 °C Platen, Rotating
nnnn• Manual or Automatic Wafer Loading and Unloading
nnnn• Compatible with Cluster Configuration
nnnnAtomic Layer Depostion Systems
nnnnAtomic layer deposition provides a unique method for depositing defect
nnnnfree ultrathin films on surfaces. This technique uses sequential surface
nnnnreactions to coat substrates with high conformality and precise thickness
nnnncontrol at the atomic scale.The process consists of sequential introduction
nnnnof desired precursor vapors with hydroxyl groups, each of which forms
nnnnabout one atomic layer per pulse. Key challenges relate to fast removal of
nnnngas in the chamber to enhance throughput as well as activation of Nitrogen
nnnnto form stoichiometric compounds of nitrides. Nano-Master, with extensive
nnnnexpertise in plasma processing and vacuum technology is able to provide
nnnnunique solutions on its Plasma Assisted ALD product line.
nnnnNLD-4000
nnnn• Hf02, Al203,Ti02, ZnO, Zr02 and various other Films
nnnn• Growth <100 nm/hr, <1 nm Growth/Cycle
nnnn• < 1% Thickness Variation, ~ 100% Step Coverage Film Conformality
nnnn• 8" 400 °C Platen, PID Controlled, Rotation Optional
nnnn• Load Lock Chamber for Auto Load Unload
nnnn• Horizontal Gas Flow
nnnn• ~ 5xl0"7 Torr Base Pressure with 250 1/sec Corrosive Turbo Pump
nnnn• Four 500 ce SS Electropolished Bubblers, Auto N2 or Ar Flushing
nnnn• Optional Dual Chamber Showerhead RF Plasma Source 600 W RF
nnnnPower Supply and Auto Tuner or 1 KW ICP
nnnn• PC Controlled, Fully Automated and Safety Interlocked
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