TGF2952 7 Watt Discrete Power GaN on SiC HEMT0 pages

TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Applications
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Marine radar
Satellite communications
Point to point communications
Military communications
Broadband amplifiers
High efficiency amplifiers

Product Features
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Functional Block Diagram

Frequency Range: DC - 14 GHz
38.4 dBm Nominal PSAT at 3 GHz
75.7% Maximum PAE at 3 GHz
20.4 dB Nominal Power Gain at 3 GHz
Bias: VD = 32 V, IDQ = 25 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 1.01 x 0.82 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2952 is a discrete 1.25 mm GaN on
SiC HEMT which operates from DC-14 GHz. The
TGF2952 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.

Pad No.

Symbol

1
2
Backside

VG / RF IN
VD / RF OUT
Source / Ground

The TGF2952 typically provides 38.4 dBm of saturated
output power with power gain of 20.4 dB at 3 GHz. The
maximum power added efficiency is 75.7 % which makes
the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.

Ordering Information
ECCN

Description

TGF2952
Datasheet: Rev A 10-20-14
© 2014 TriQuint

Part

EAR99

7 Watt GaN HEMT

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Disclaimer: Subject to change without notice

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