TSC-AP-02020 GaAs Schottky Diode0 pages

Antiparallel TSC-AP-02020 DATASHEET
Version1- http://www.teledyne-si.com/schottky_diodes/index.html

GaAs Schottky diode –Antiparallel TSC-AP-02020

Features
♦
♦
♦
♦
♦
♦
♦
♦
♦

Junction capacitance as low as 1fF allowing cutoff frequency >2THz
Very low parasitic capacitance < 9fF
Ultra low series resistance
Airbridged anode contact for low parasitic operation
Fully passivated by SiN
Flip chip and beamlead geometry
Anode metalization optimized for reliable optimization
MMIC backend process available for integrated passives and vias
Unique gold stand-off platforms for ruggedness in flip-chip applications

Description
Ideality
Junction Capacitance
Capacitance Total
Series Reistance
Forward Voltage
Reverse Breakdown Voltage
Saturation Current

Symbol

Part Number

N
Cj
Ct
Rs
VF
VBr
Is

Condition

TSC-AP-02020

Max

1.1
4 fF
20 fF
IF @ 1mA
IR @ -5uA

Min

1.2
4 fF
26 fF
8.5 ohms
0.85 V

0.7 V
-5 V

1e-14 A

Product Description
♦
♦
♦
♦
♦

Ideality(N) is measured using N=1/(Vth*ln(10)*m) where m=I(0.62v)-I(0.48v)/0.62-0.48 and Vth=K*T/q
Is is measured using Is=I(V_0)
VBr is measured at reverse bias current compliance of –5uA
VF is measured at forward current of 1mA
Rs is measured using Rs = 111.11*((V@5mA-V@500uA)-(V@100uA-V@10uA))
♦ Junction capacitance is calculated based on the device area and a fixed capacitance per unit area

Ordering information
PART NUMBER

TSC-AP-02020

DESCRIPTION
Antiparallel diode with Cj = 9.8 fF

Teledyne Scientific Company reserves the right to make changes to its product specifications at any time without notice.
The information furnished herein is believed to be accurate; however, no responsibility is assumed for its use.

Page 1 of 1