HV MOSFETs DTMOS0 pages

HV MOSFETs

DTMOS
Latest Super-Junction Technology
Toshiba has developed the Gen-4 super-junction
600V and 650V DTMOS IV MOSFET series.
Fabricated using the state-of-the-art single epitaxial
process, DTMOS IV provides a 30% reduction in
Ron*A, a figure of merit (FOM) for MOSFETs,
compared to its predecessor, DTMOS III. A reduction
in Ron*A leads to smaller RDSon chips in the same
packages. This helps users to improve efficiency and
reduce the size of power systems.

APPLICATIONS
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Switched Mode Power Supply (SMPS)
Lighting
Power Factor Control (PFC)
Industrial Applications (including UPS)

FEATURES

ADVANTAGES

BENEFITS

30% reduction in RDSon*A
compared to previous generation

Reduction of chip size at same
performance or improved
performance at same chip size

Improved figure of merit (FOM)
compared to DTMOS III
generation

Improved electrical efficiency by
reduced switching and static
losses

Reduction in Coss

12% reduction in switching loss,
EOSS, compared to the
predecessor

Application of latest process
technology: single epitaxial
process

Lower increase in on-resistance
at temperature rise

Wide range of on-resistances
and packaging options, see
tables

Freedom of choice and flexibility
on package and on RDSon line-up

45% reduction of Qgd (gate drain
charge) at X-Series

High efficiency switching at PFC

Attractive cost effects
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Reduced heat system costs

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Less costs of field failure

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Less passive component costs

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Reduced BOM costs due to most
effective solutions

Smart performance increases
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DTMOS IV - SERIES

Easy design-in for faster time to
market and product launch

•

Ready to support high volume
markets with competitive prices

APPLICATIONS

W-Series: Standard type

For general switching

W5-Series: With high speed body diode

For bridge circuitry, like UPS or server SMPS

X-Series: High speed type

For PFC circuit

X5-Series: High speed type with high speed body diode

For bridge circuitry, like UPS or server SMPS
www.toshiba.se