power MOSFETs XP151A12A2MR0 pages

XP151A12A2MR-G

ETR1118_003

Power MOSFET

■GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems

■PIN CONFIGURATION/
MARKING

Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.16Ω@ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free

■PRODUCT NAMES
PRODUCTS

1 1 2 x

SSource

XP151A12A2MR-G
(*)

(*)

ORDER UNIT

SOT-23

XP151A12A2MR

GGate
DDrain

PACKAGE

3,000/Reel

SOT-23

3,000/Reel

The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.

* x represents production lot number.

■EQUIVALENT CIRCUIT

■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Vdss

20

V

Gate - Source Voltage

Vgss

±12

V

Drain Current (DC)

Id

1

A

Drain Current (Pulse)

Idp

4

A

Reverse Drain Current

Idr

1

A

Channel Power Dissipation *

Pd

0.5

W

Channel Temperature

Tch

150

℃

Storage Temperature

Tstg

-55~150

℃

* When implemented on a ceramic PCB

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